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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

DC/DC Resonant LLC

Higher efficiency, higher power density, and higher component density have become common in power-supply designs and their applications. To achieve both higher switching frequencies and lower switching losses, many designs are turning to half- or full-bridge resonant LLC topologies. By using a resonant LLC tank, this effectively filters out harmonics resulting in low electro-magnetic emissions levels (EMI). It can also enable a high degree of integration in the magnetic parts, enabling the design of converters with higher efficiency and power density.

Block diagram

設(shè)計(jì)考慮因素

  • 開始采用PWM驅(qū)動(dòng)無刷直流電機(jī)控制
  • 電機(jī)驅(qū)動(dòng)MOSFET必須以低RDSon和良好的熱阻抗來滿足峰值高電流需求
  • 如果過載情況會(huì)降低電池和柵極電壓,則可能需要具有強(qiáng)線性模式性能的MOSFET來提供反向電池保護(hù)
  • MOSFET可能需要滿足UL2595等的具體間距要求
  • 為小尺寸優(yōu)化的電荷平衡MOSFET,通常裝在可移動(dòng)電池組中——每個(gè)電池一個(gè)

MOSFET and GaN FET Handbook

Drawing on over 20 years’ of experience, the MOSFET and GaN FET Application Handbook: A Power Design Engineer’s Guide brings together a comprehensive set of learning and reference materials relating to the use of MOSFETs and GaN FETs in real world systems.

Download your copy today 

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