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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產(chǎn)品(AEC-Q100/Q101)

74AUP2G00GX

Low-power dual 2-input NAND gate

The 74AUP2G00 provides dual 2-input NAND function.

Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.

This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.

This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.

Features and benefits

  • Wide supply voltage range from 0.8 V to 3.6 V

  • High noise immunity

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.2 V to 1.95 V)

    • JESD8-5 (1.8 V to 2.7 V)

    • JESD8-B (2.7 V to 3.6 V)

  • Low static power consumption; ICC = 0.9 μA (maximum)

  • Latch-up performance exceeds 100 mA per JESD78 Class II

  • Inputs accept voltages up to 3.6 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial power-down mode operation

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

參數(shù)類型

型號 VCC (V) Logic switching levels Output drive capability (mA) tpd (ns) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C) Package name
74AUP2G00GX 0.8?-?3.6 CMOS ± 1.9 8.3 70 2 ultra low -40~125 X2SON8

封裝

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
74AUP2G00GX 74AUP2G00GXX
(935308439115)
Active pA SOT1233-2
X2SON8
(SOT1233-2)
SOT1233-2 SOT1233-2_115

環(huán)境信息

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74AUP2G00GX 74AUP2G00GXX 74AUP2G00GX rohs rhf rhf
品質及可靠性免責聲明

文檔 (8)

文件名稱 標題 類型 日期
74AUP2G00 Low-power dual 2-input NAND gate Data sheet 2024-08-12
SOT1233-2 3D model for products with SOT1233-2 package Design support 2021-01-28
aup2g00 aup2g00 IBIS model IBIS model 2013-04-07
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Leaflet 2019-04-12
Nexperia_document_leaflet_Logic_X2SON_packages_062018 X2SON ultra-small 4, 5, 6 & 8-pin leadless packages Leaflet 2018-06-05
SOT1233-2 plastic thermal enhanced extremely thin small outline package; no leads;8 terminals; body 1.35 x 0.8 x 0.32 mm Package information 2022-04-21
SOT1233-2_115 X2SON8; Reel pack for SMD, 7''; Q1/T1 product orientation Packing information 2020-05-12
74AUP2G00GX_Nexperia_Product_Reliability 74AUP2G00GX Nexperia Product Reliability Quality document 2024-06-16

支持

如果您需要設計/技術支持,請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
aup2g00 aup2g00 IBIS model IBIS model 2013-04-07
SOT1233-2 3D model for products with SOT1233-2 package Design support 2021-01-28

訂購、定價與供貨

型號 Orderable part number Ordering code (12NC) 狀態(tài) 包裝 Packing Quantity 在線購買
74AUP2G00GX 74AUP2G00GXX 935308439115 Active SOT1233-2_115 10,000 訂單產(chǎn)品

樣品

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購部件

型號 可訂購的器件編號 訂購代碼(12NC) 封裝 從經(jīng)銷商處購買
74AUP2G00GX 74AUP2G00GXX 935308439115 SOT1233-2 訂單產(chǎn)品
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