可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| 2N7002 | 2N7002,215 | 934003470215 | SOT23 | 訂單產品 |
| 2N7002 | 2N7002,235 | 934003470235 | SOT23 | 訂單產品 |
| 2N7002 | 2N7002/HAMR | 934660832215 | SOT23 | 訂單產品 |
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Click here for more information2N7002
60 V, 300 mA N-channel Trench MOSFET
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.
Alternatives
Features and benefits
Suitable for logic level gate drive sources
Very fast switching
Surface-mounted package
Trench MOSFET technology
Applications
Logic level translators
High-speed line drivers
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2N7002 | SOT23 | SOT23 | Production | N | 1 | 60 | 30 | 5000 | 5300 | 150 | 0.3 | 0.83 | 30 | 2 | N | 31 | 6.8 | 2011-01-24 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 2N7002 | 2N7002,215 (934003470215) |
Active | 12% |
(SOT23) |
SOT23 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT23_215 |
| 2N7002,235 (934003470235) |
Active | 12% | SOT23_235 | ||||
| 2N7002/HAMR (934660832215) |
Active | 12% | SOT23_215 |
環(huán)境信息
| 型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 2N7002 | 2N7002,215 | 2N7002 |
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| 2N7002 | 2N7002,235 | 2N7002 |
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| 2N7002 | 2N7002/HAMR | 2N7002 |
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文檔 (21)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| 2N7002 | 60 V, 300 mA N-channel Trench MOSFET | Data sheet | 2018-06-25 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10441 | Level shifting techniques in I2C-bus design | Application note | 2020-02-11 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2025-02-18 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| SOT23 | 3D model for products with SOT23 package | Design support | 2019-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT23_mk | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT23 | plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body | Package information | 2022-10-12 |
| SOT23_215 | Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2025-01-20 |
| SOT23_235 | Reel pack for SMD, 11"; Q3/T4 product orientation | Packing information | 2020-06-01 |
| SOT23_215 | Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2025-01-20 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| 2N7002 | 2N7002 SPICE model | SPICE model | 2012-06-08 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
2N7002
60 V, 300 mA N-channel Trench MOSFET
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