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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產(chǎn)品(AEC-Q100/Q101)

74HC3G14GD

Triple inverting Schmitt trigger

The 74HC3G14; 74HCT3G14 is a triple inverter with Schmitt-trigger inputs. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. Schmitt trigger inputs transform slowly changing input signals into sharply defined jitter-free output signals.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 2.0 V to 6.0 V

  • Input levels:

    • For 74HC3G14: CMOS level

    • For 74HCT3G14: TTL level

  • CMOS low power dissipation

  • High noise immunity

  • Unlimited input rise and fall times

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Complies with JEDEC standards:

    • JESD8C (2.7 V to 3.6 V)

    • JESD7A (2.0 V to 6.0 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

Applications

  • Wave and pulse shaper for highly noisy environments

  • Astable multivibrators

  • Monostable multivibrators

參數(shù)類型

型號 Package name
74HC3G14GD XSON8

文檔 (4)

文件名稱 標題 類型 日期
74HC_HCT3G14 Triple inverting Schmitt trigger Data sheet 2023-12-18
AN11044 Pin FMEA 74HC/74HCT family Application note 2019-01-09
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT996-2 plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body Package information 2020-04-21

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模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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