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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

PESD3V3L5UV

Low capacitance unidirectional fivefold ESD protection diode arrays

Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode arrays in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic packages designed to protect up to five unidirectional signal lines from the damage caused by ESD and other transients.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • ESD protection of up to five lines
  • Low diode capacitance
  • Max. peak pulse power: PPPM = 25 W
  • Low clamping voltage: VCL = 12 V
  • Ultra low leakage current: IRM = 75 nA
  • ESD protection up to 20 kV
  • IEC 61000-4-2; level 4 (ESD)
  • IEC 61000-4-5 (surge); IPPM = 2.5 A

Application information

  • Computers and peripherals
  • Audio and video equipment
  • Cellular handsets and accessories
  • Communication systems
  • Portable electronics
  • SIM card protection

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
PESD3V3L5UV PESD3V3L5UV,115
(934057796115)
Obsolete no package information
PESD3V3L5UV/DG,115
(934062296115)
Obsolete

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
PESD3V3L5UV PESD3V3L5UV,115 PESD3V3L5UV rohs rhf rhf
PESD3V3L5UV PESD3V3L5UV/DG,115 PESD3V3L5UV rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (5)

文件名稱 標題 類型 日期
PESDXL5UF_V_Y Low capacitance unidirectional fivefold ESD protection diode arrays Data sheet 2020-05-01
PESD3V3L5UV PESD3V3L5UV SPICE model SPICE model 2012-07-22
PESD3V3L5UV PESD3V3L5UV SPICE model SPICE model 2025-02-03
PESD3V3L5UY Cad-Symbol of PESD3V3L5UY Software 2008-11-20
PESD5V0L5UY Cad-Symbol of PESD5V0L5UY Software 2008-11-20

支持

如果您需要設(shè)計/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。

模型

文件名稱 標題 類型 日期
PESD3V3L5UV PESD3V3L5UV SPICE model SPICE model 2012-07-22
PESD3V3L5UV PESD3V3L5UV SPICE model SPICE model 2025-02-03

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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