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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

PMN27UP

20 V, 5.7 A P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • 1.8 V RDSon rated
  • Very fast switching
  • Trench MOSFET technology

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits

參數(shù)類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMN27UP SOT457 TSOP6 End of life P 1 -20 8 32 41 150 -5.7 2.8 21 0.54 -0.7 N 2340 210 2011-07-14

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
PMN27UP PMN27UP,115
(934064768115)
Obsolete ZU SOT457
TSOP6
(SOT457)
SOT457 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT457_115
PMN27UPH
(934064768125)
Obsolete ZU SOT457_125

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
PMN27UP PMN27UP,115 PMN27UP rohs rhf rhf
PMN27UP PMN27UPH PMN27UP rohs rhf rhf
品質(zhì)及可靠性免責聲明

文檔 (19)

文件名稱 標題 類型 日期
PMN27UP 20 V, 5.7 A P-channel Trench MOSFET Data sheet 2017-06-08
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2025-02-18
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
Nexperia_document_guide_MiniLogic_PicoGate_201901 PicoGate leaded logic portfolio guide Brochure 2019-01-07
SOT457 3D model for products with SOT457 package Design support 2022-11-04
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
TSOP6_SOT457_mk plastic, surface-mounted package (TSOP6); 6 leads; 0.95 mm pitch; 2.9 mm x 1.5 mm x 1 mm body Marcom graphics 2017-01-28
SOT457 plastic, surface-mounted package (SC-74; TSOP6); 6 leads Package information 2023-03-03
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PMN27UP_4_9_2011 PMN27UP_4_9_2011 Spice parameter SPICE model 2011-09-13
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
MAR_SOT457 MAR_SOT457 Topmark Top marking 2013-06-03
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要設(shè)計/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。

模型

文件名稱 標題 類型 日期
PMN27UP_4_9_2011 PMN27UP_4_9_2011 Spice parameter SPICE model 2011-09-13
SOT457 3D model for products with SOT457 package Design support 2022-11-04

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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