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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

PMZ200UNE

30 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Very fast switching

  • Low threshold voltage

  • Trench MOSFET technology

  • ElectroStatic Discharge (ESD) protection: 2 kV HBM

  • Leadless ultra small package: 1.0 × 0.6 × 0.48 mm

Applications

  • Relay driver

  • High-speed line driver

  • Low-side loadswitch

  • Switching circuits

參數(shù)類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) VESD (kV) (kV) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMZ200UNE SOT883 DFN1006-3 Production N 1 30 8 250 310 2000 150 1.4 0.4 1.6 0.35 0.7 N 89 11 2015-03-12

封裝

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
PMZ200UNE PMZ200UNEYL
(934068609315)
Active ZV SOT883
DFN1006-3
(SOT883)
SOT883 REFLOW_BG-BD-1
SOT883_315

環(huán)境信息

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
PMZ200UNE PMZ200UNEYL PMZ200UNE rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (16)

文件名稱 標題 類型 日期
PMZ200UNE 30 V, N-channel Trench MOSFET Data sheet 2017-05-19
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
AN90023 Thermal performance of DFN packages Application note 2020-11-23
SOT883 3D model for products with SOT883 package Design support 2020-01-22
nexperia_document_leaflet_SsMOS_for_mobile_2022-CHN 適合移動和便攜式設(shè)備的 大批量小信號MOSFET, 采用WLCSP和無引腳DFN封裝 Leaflet 2022-07-04
nexperia_document_leaflet_SsMOS_for_mobile_2022 High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packages Leaflet 2022-07-04
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN1006-3_SOT883_mk plastic, leadless ultra small package; 3 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body Marcom graphics 2017-01-28
SOT883 plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body Package information 2022-05-20
SOT883_315 DFN1006-3; Reel pack for SMD, 7"; Q3/T4 product orientation Packing information 2021-01-27
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PMZ200UNE PMZ200UNE Spice model SPICE model 2015-05-20
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

如果您需要設(shè)計/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。

模型

文件名稱 標題 類型 日期
PMZ200UNE PMZ200UNE Spice model SPICE model 2015-05-20
SOT883 3D model for products with SOT883 package Design support 2020-01-22

訂購、定價與供貨

型號 Orderable part number Ordering code (12NC) 狀態(tài) 包裝 Packing Quantity 在線購買
PMZ200UNE PMZ200UNEYL 934068609315 Active SOT883_315 10,000 訂單產(chǎn)品

樣品

作為 Nexperia 的客戶,您可以通過我們的銷售機構(gòu)訂購樣品。

如果您沒有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購部件

型號 可訂購的器件編號 訂購代碼(12NC) 封裝 從經(jīng)銷商處購買
PMZ200UNE PMZ200UNEYL 934068609315 SOT883 訂單產(chǎn)品
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