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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PTVS5V0Z1USKN

Transient voltage suppressor in DSN1608-2 for mobile applications

Unidirectional Transient Voltage Suppressor (TVS) in an ultra small leadless DSN1608-2 (SOD963) package, designed for transient overvoltage protection.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Rated peak pulse current: IPPM = 80 A (8/20 μs pulse)
  • Rated peak pulse power: PPPM = 1200 W (8/20 μs pulse)
  • Dynamic resistance Rdyn = 0.06 ?
  • Reverse current: IRM = 0.025 μA
  • Very low package height: 0.25 mm

Applications

  • Power supply protection
  • Industrial application
  • Power management

參數(shù)類型

型號 Package name
PTVS5V0Z1USKN DSN1608-2

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
PTVS5V0Z1USKN PTVS5V0Z1USKNYL
(934069207315)
Obsolete no package information

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
PTVS5V0Z1USKN PTVS5V0Z1USKNYL PTVS5V0Z1USKN rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (2)

文件名稱 標(biāo)題 類型 日期
PTVS5V0Z1USKN Transient voltage suppressor in DSN1608-2 for mobile applications Data sheet 2017-05-04
PTVS5V0Z1USKN PTVS5V0Z1USKN SPICE Model SPICE model 2015-12-08

支持

如果您需要設(shè)計/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。


Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名稱 標(biāo)題 類型 日期
PTVS5V0Z1USKN PTVS5V0Z1USKN SPICE Model SPICE model 2015-12-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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