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Click here for more information74LVC3G16GM
Triple buffer
The 74LVC3G16 provides three buffers.
The inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of the 74LVC3G16 as a translator in a mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.
Alternatives
Features and benefits
Wide supply voltage range from 1.65 V to 5.5 V
5 V tolerant input/output for interfacing with 5 V logic
High noise immunity
±24 mA output drive (VCC = 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8B/JESD36 (2.7 V to 3.6 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +85 °C and -40 °C to +125 °C
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74LVC3G16GM | 74LVC3G16GMH (935307608125) |
Obsolete | no package information | ||||
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74LVC3G16GM | 74LVC3G16GMH | 74LVC3G16GM |
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Series
文檔 (1)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| lvc3g16 | 74LVC3G16 IBIS model | IBIS model | 2015-11-09 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| lvc3g16 | 74LVC3G16 IBIS model | IBIS model | 2015-11-09 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.