精品中文字幕在线网站-亚洲欧美国产一区二区综合-国产精品国三级国产专不卡-深夜福利视频中文字幕一区二区

雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

74AXP1G86GN

Low-power 2-input EXCLUSIVE-OR gate

The 74AXP1G86 is a single 2-input EXCLUSIVE-OR gate.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device ensures very low static and dynamic power consumption across the entire VCC range from 0.7 V to 2.75 V. It is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此產品已停產

Features and benefits

  • Wide supply voltage range from 0.7 V to 2.75 V

  • Low input capacitance; CI = 0.5 pF (typical)

  • Low output capacitance; CO = 1.0 pF (typical)

  • Low dynamic power consumption; CPD = 2.6 pF at VCC = 1.2 V (typical)

  • Low static power consumption; ICC = 0.6 μA (85 °C maximum)

  • High noise immunity

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Inputs accept voltages up to 2.75 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial Power-down mode operation

  • Complies with JEDEC standard:

    • JESD8-12A.01 (1.1 V to 1.3 V)

    • JESD8-11A.01 (1.4 V to 1.6 V)

    • JESD8-7A (1.65 V to 1.95 V)

    • JESD8-5A.01 (2.3 V to 2.7 V)

  • ESD protection:

    • HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2000 V

    • CDM JESD22-C101E exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C

參數(shù)類型

型號 VCC (V) Logic switching levels Output drive capability (mA) tpd (ns) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C)
74AXP1G86GN 0.7?-?2.75 CMOS ± 4.5 4.5 70 1 ultra low -40~85

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
74AXP1G86GN 74AXP1G86GNH
(935306692125)
Obsolete no package information

環(huán)境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74AXP1G86GN 74AXP1G86GNH 74AXP1G86GN rohs rhf rhf
品質及可靠性免責聲明

文檔 (4)

文件名稱 標題 類型 日期
74AXP1G86 Low-power 2-input EXCLUSIVE-OR gate Data sheet 2022-02-21
axp1g86 74AXP1G86 IBIS model IBIS model 2015-11-11
Nexperia_document_leaflet_Logic_AXP_technology_portfolio_201904 AXP – Extremely low-power logic technology portfolio Leaflet 2019-04-05
74AXP1G86GN_Nexperia_Product_Reliability 74AXP1G86GN Nexperia Product Reliability Quality document 2022-05-04

支持

如果您需要設計/技術支持,請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
axp1g86 74AXP1G86 IBIS model IBIS model 2015-11-11

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

紫金县| 泽普县| 波密县| 腾冲县| 高淳县| 乳源| 徐州市| 平定县| 合水县| 化州市| 长海县| 广西| 贵溪市| 连山| 阳泉市| 丰县| 四川省| 文水县| 江陵县| 雷州市| 山丹县| 城固县| 丹寨县| 洛南县| 冷水江市| 崇礼县| 五华县| 霸州市| 伽师县| 江油市| 东兴市| 芦溪县| 从化市| 平安县| 获嘉县| 阳谷县| 海兴县| 泰州市| 深泽县| 定南县| 玉门市|