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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車(chē)應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

NPS1001UP

0.5 V to 1.8 V, 1.5 A peak, 12 mΩ, load switch

NPS1001 is a low voltage, single-channel load switch with a low RDS,ON (12 mΩ) to minimize IR drop and power loss. It supports up to 0.6 A RMS current and a peak current of 1.5 A.

The switch is controlled by an enable input (EN) which is compatible with 1.2 V logic levels. When the load switch is enabled, the internal switch charges the output capacitor with a controlled inrush current. When the switch is disabled, an 8 Ω on-chip resistor discharges the output to ground and keeps it from floating.

The IC is powered from a separate BIAS pin which is rated for 3 V to 5 V operation.

NPS1001 has an over-temperature protection that latches the device OFF when the internal junction temperature is above the set point (Tth(OTLO)). At this time, the internal switch is turned off and the output discharge element turns on to discharge the output capacitor. The load switch can be enabled again by toggling the enable (EN) pin.

NPS1001 is available in an ultra-small, space saving, wafer level chip-scale package; 8 bumps; 1.42 mm × 0.72 mm × 0.465 mm body and is characterized for operation over ambient temperature range of –?40 °C to 105 °C.

Features and benefits

  • 0.5 V to 1.8 V operation voltage
  • 3 V to 5 V bias voltage
  • Low RDS,ON: 12 mΩ (typical) at 25 °C, 16 mΩ (maximum) at 85 °C
  • Enable logic supports 1.2 V logic levels
  • 0.6 A RMS and 1.5 A peak current capability
  • Controlled start-up
    • <200 μs from enable to full enhancement of power FET
  • Output short tolerant
    • When supplied by a 4.5 A current limited power supply
  • Over-temperature shutdown and input UVLO protection
  • 8 Ω discharge while disabled
  • Small package footprint
  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C2a exceeds 500 V

  • Specified from Tj = -40 °C to +105 °C

Applications

  • Mobile phones

  • Wearables

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
NPS1001UP NPS1001UPZ
(935692138336)
Active sD WLCSP8_SOT8068
(WLCSP8_SOT8068)
WLCSP8_SOT8068 暫無(wú)信息

環(huán)境信息

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
NPS1001UP NPS1001UPZ NPS1001UP rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

Series

文檔 (2)

文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
NPS1001 0.5 V to 1.8 V, 1.5 A peak, 12 mΩ, load switch Data sheet 2024-12-09
WLCSP8_SOT8068 wafer level chip-scale package; 8 bumps; 1.42 × 0.72 × 0.465 mm body Package information 2024-01-25

支持

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模型

No documents available

PCB Symbol, Footprint and 3D Model

Model Name 描述

訂購(gòu)、定價(jià)與供貨

型號(hào) Orderable part number Ordering code (12NC) 狀態(tài) 包裝 Packing Quantity 在線(xiàn)購(gòu)買(mǎi)
NPS1001UP NPS1001UPZ 935692138336 Active 暫無(wú)信息 8,000 訂單產(chǎn)品

樣品

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購(gòu)部件

型號(hào) 可訂購(gòu)的器件編號(hào) 訂購(gòu)代碼(12NC) 封裝 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi)
NPS1001UP NPS1001UPZ 935692138336 WLCSP8_SOT8068 訂單產(chǎn)品
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