可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷商處購(gòu)買 |
|---|---|---|---|---|
| NGW30T65M3DFP | NGW30T65M3DFPQ | 934668335127 | SOT429-2 | 訂單產(chǎn)品 |
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Click here for more informationNGW30T65M3DFP
650 V, 30 A trench field-stop IGBT with full rated silicon diode
The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 30 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.
Features
Device current is rated at 30 A
Low conduction and switching losses
Stable and tight parameters for easy parallel operation
Maximum junction temperature 175 °C
Fully rated and fast reverse recovery diode
5 μs short circuit withstand time
HV-H3TRB qualified
Applications
Motor drives for industrial and consumer appliances
Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc.
Power inverters, such as
Uninterruptible Power Supply (UPS) inverter
EV charging converter
Induction heating
Welding
參數(shù)類型
| 型號(hào) | Product status | VCE [max] (V) | IC [typ] (A) | Configuration | tsc [max] (μs) | Tj [min] (°C) | Tj [max] (°C) | Package version | Package name |
|---|---|---|---|---|---|---|---|---|---|
| NGW30T65M3DFP | Production | 650 | 30 | MS | 5 | -40 | 175 | SOT429-2 | TO-247-3L |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| NGW30T65M3DFP | NGW30T65M3DFPQ (934668335127) |
Active | W30T65M3DFP |
TO-247-3L (SOT429-2) |
SOT429-2 | SOT429-2_127 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| NGW30T65M3DFP | NGW30T65M3DFPQ | NGW30T65M3DFP |
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文檔 (5)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| NGW30T65M3DFP | 650 V, 30 A trench field-stop IGBT with full rated silicon diode | Data sheet | 2025-01-17 |
| AN90042 | Nexperia 650 V (G3) IGBT product introduction | Application note | 2025-03-06 |
| SOT429-2_TO-247-TL | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Marcom graphics | 2023-11-15 |
| SOT429-2 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Package information | 2022-02-10 |
| SOT429-2_127 | TO-247-3L; Tube pack; Standard product orientation | Packing information | 2023-04-03 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。
模型
No documents available
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買 |
|---|---|---|---|---|---|---|
| NGW30T65M3DFP | NGW30T65M3DFPQ | 934668335127 | Active | SOT429-2_127 | 450 | 訂單產(chǎn)品 |
樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
NGW30T65M3DFP
650 V, 30 A trench field-stop IGBT with full rated silicon diode
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