可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| NGW75T65H3DF | NGW75T65H3DFQ | 934665504127 | SOT429-2 | 訂單產(chǎn)品 |
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Click here for more informationNGW75T65H3DF
IGBT with trench construction, fast recovery diode
The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third?-?generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
Features
Device current is rated at 75 A
Low conduction and switching losses
Stable and tight parameters for easy parallel operation
Maximum junction temperature 175 °C
Fully rated and fast reverse recovery diode
HV-H3TRB qualified
Applications
Power inverters such as
Uninterruptible Power Supply (UPS) inverter
EV charging converter
Power Factor Correction (PFC)
Induction heating
Welding
參數(shù)類型
| 型號 | Product status | VCE [max] (V) | IC [typ] (A) | Configuration | Tj [min] (°C) | Tj [max] (°C) | Package version | Package name |
|---|---|---|---|---|---|---|---|---|
| NGW75T65H3DF | Production | 650 | 75 | HS | -40 | 175 | SOT429-2 | TO-247-3L |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| NGW75T65H3DF | NGW75T65H3DFQ (934665504127) |
Active | W75T65H3DF |
TO-247-3L (SOT429-2) |
SOT429-2 | SOT429-2_127 |
文檔 (7)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| NGW75T65H3DF | 650 V, 75 A trench field-stop IGBT with full rated silicon diode | Data sheet | 2025-02-28 |
| AN90042 | Nexperia 650 V (G3) IGBT product introduction | Application note | 2025-03-06 |
| SOT429-2 | SOT429-2.step | Design support | 2024-11-22 |
| SOT429-2_TO-247-TL | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Marcom graphics | 2023-11-15 |
| SOT429-2 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Package information | 2022-02-10 |
| SOT429-2_127 | TO-247-3L; Tube pack; Standard product orientation | Packing information | 2023-04-03 |
| NGW75T65H3DF_L1 | NGW75T65H3DF SPICE model | SPICE model | 2024-12-06 |
支持
如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| SOT429-2 | SOT429-2.step | Design support | 2024-11-22 |
| NGW75T65H3DF_L1 | NGW75T65H3DF SPICE model | SPICE model | 2024-12-06 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| NGW75T65H3DF | NGW75T65H3DFQ | 934665504127 | Active | SOT429-2_127 | 450 | 訂單產(chǎn)品 |
樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
NGW75T65H3DF
IGBT with trench construction, fast recovery diode
從安世半導體購買
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