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12 V, P-channel Trench MOSFET
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Low threshold voltage
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portable devices
Computing power management
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMPB07R3VP | SOT1220-2 | DFN2020M-6 | End of life | P | 1 | -12 | 8 | 8.6 | 12 | 150 | -17.5 | 7.4 | 28 | 1.9 | -0.65 | N | 2121 | 511 | 2021-03-01 |
Series
文檔 (9)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PMPB07R3VP | 12 V, P-channel Trench MOSFET | Data sheet | 2021-03-01 |
| AN11119 | Medium power small-signal MOSFETs in DC-to-DC conversion | Application note | 2013-05-07 |
| AN90017 | Load switches for mobile and computing applications | Application note | 2020-09-02 |
| AN90023 | Thermal performance of DFN packages | Application note | 2020-11-23 |
| SOT1220-2 | 3D model for products with SOT1220-2 package | Design support | 2023-02-02 |
| nexperia_document_leaflet_SsMOS_for_mobile_2022-CHN | 適合移動和便攜式設備的 大批量小信號MOSFET， 采用WLCSP和無引腳DFN封裝 | Leaflet | 2022-07-04 |
| nexperia_document_leaflet_SsMOS_for_mobile_2022 | High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packages | Leaflet | 2022-07-04 |
| SOT1220-2 | plastic thermal enhanced ultra thin small outline package; no leads;6 terminals; body 2 x 2 x 0.65 mm | Package information | 2020-06-17 |
| PMPB07R3VP | PMPB07R3VP SPICE model | SPICE model | 2021-03-04 |
支持
如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PMPB07R3VP | PMPB07R3VP SPICE model | SPICE model | 2021-03-04 |
| SOT1220-2 | 3D model for products with SOT1220-2 package | Design support | 2023-02-02 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PMPB07R3VP
12 V, P-channel Trench MOSFET
從安世半導體購買
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