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50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor
NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.
PNP/PNP complement: PBSS5350SS
Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Applications
- Dual low power switches (e.g. motors, fans)
- Automotive
參數(shù)類型
| 型號 | Package version | Package name | Size (mm) | Product status | channel type (e) | Nr of transistors | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | VCEsat [max] (NPN) (mV) | RCEsat@IC [max] (mΩ) | hFE [min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS4350SS | SOT96-1 | SO8 | 4.9 x 3.9 x 1.75 | End of life | NPN | 2 | 1200.0 | 50.0 | 2.7 | 340.0 | 130.0 | 300.0 |
封裝
下表中的所有產品型號均已停產 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS4350SS | PBSS4350SS,115 (934061031115) |
Obsolete | OBS 4350SS |
SO8 (SOT96-1) |
SOT96-1 |
SO-SOJ-REFLOW
SO-SOJ-WAVE WAVE_BG-BD-1 |
SOT96-1_115 |
| PBSS4350SSJ (934061031118) |
Obsolete | OBS 4350SS | SOT96-1_118 |
環(huán)境信息
下表中的所有產品型號均已停產 。
| 型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSS4350SS | PBSS4350SS,115 | PBSS4350SS |
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| PBSS4350SS | PBSS4350SSJ | PBSS4350SS |
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文檔 (11)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PBSS4350SS | 50 V, 2.7 A NPN/NPN low V_CEsat (BISS) transistor | Data sheet | 2018-08-28 |
| AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SO8_SOT96-1_mk | plastic, small outline package; 8 leads; 1.27 mm pitch; 4.9 mm x 3.9 mm x 1.75 mm body | Marcom graphics | 2017-01-28 |
| SOT96-1 | plastic, small outline package; 8 leads; 1.27 mm pitch; 4.9 mm x 3.9 mm x 1.75 mm body | Package information | 2020-04-21 |
| PBSS4350SS_Nexperia_Product_Quality | PBSS4350SS Nexperia Product Quality | Quality document | 2019-05-20 |
| PBSS4350SS_Nexperia_Product_Reliability | PBSS4350SS Nexperia Product Reliability | Quality document | 2019-04-29 |
| SO-SOJ-REFLOW | Footprint for reflow soldering | Reflow soldering | 2009-10-08 |
| PBSS4350SS | PBSS4350SS SPICE model | SPICE model | 2024-08-27 |
| SO-SOJ-WAVE | Footprint for wave soldering | Wave soldering | 2009-10-08 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PBSS4350SS | PBSS4350SS SPICE model | SPICE model | 2024-08-27 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PBSS4350SS
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor
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